11th European Symposium on Semiconductor Detectors

Session

Defects in Semiconductors and Radiation Tolerance

10 Jun 2009, 16:40

Main Auditorium (Wildbad Kreuth)

17. Study of the Radiation Hardness of Silicon Sensors for the XFEL

Eckhart Fretwurst (Institut für Experimentalphysik, Universität Hamburg)

10/06/2009, 16:40

18. Charge collection studies of radiation damaged n- and p-type epitaxial silicon detectors

Jörn Lange (University of Hamburg)

10/06/2009, 17:00

19. The impact of neutral base region on the collected charge in heavily irradiated silicon detectors

Elena Verbitskaya (Ioffe Physico-Technical Institute of Russian Academy of Sciences)

10/06/2009, 17:20

20. Efficiency of segmented silicon detectors of various thicknesses after hadron irradiations up to 2E16 n/cm2

Gianluigi Casse (University of Liverpool)

10/06/2009, 17:40

21. Plasma effects in silicon detectors for the European XFEL and their impact on sensor performance

Julian Becker (University of Hamburg)

10/06/2009, 18:00