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11th European Symposium on Semiconductor Detectors

7–11 Jun 2009
Wildbad Kreuth
Europe/Berlin timezone
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Session

Defects in Semiconductors and Radiation Tolerance

10 Jun 2009, 16:40
Main Auditorium (Wildbad Kreuth)

Main Auditorium

Wildbad Kreuth

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  1. 17. Study of the Radiation Hardness of Silicon Sensors for the XFEL
    Eckhart Fretwurst (Institut für Experimentalphysik, Universität Hamburg)
    10/06/2009, 16:40
  2. 18. Charge collection studies of radiation damaged n- and p-type epitaxial silicon detectors
    Jörn Lange (University of Hamburg)
    10/06/2009, 17:00
  3. 19. The impact of neutral base region on the collected charge in heavily irradiated silicon detectors
    Elena Verbitskaya (Ioffe Physico-Technical Institute of Russian Academy of Sciences)
    10/06/2009, 17:20
  4. 20. Efficiency of segmented silicon detectors of various thicknesses after hadron irradiations up to 2E16 n/cm2
    Gianluigi Casse (University of Liverpool)
    10/06/2009, 17:40
  5. 21. Plasma effects in silicon detectors for the European XFEL and their impact on sensor performance
    Julian Becker (University of Hamburg)
    10/06/2009, 18:00
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