Development of SOI Pixel Detectors at KEK

by Yasuo Arai (KEK)

Wednesday 29 Jun 2011, 17:15 → 18:15 Europe/Berlin

Main-2-313 (MPI fuer Physik)

We have been developing monolithic pixel detectors with a Silicon-On-Insulator (SOI) technology. The process is based on 0.2um FD-SOI CMOS process of OKI semiconductor Co. Ltd. We could operate CMOS circuits under full depletion with 500um thick sensors. One of the sensors, 430k pixel detector of 17 um x 17 um pixel area, revealed very fine X-ray images. In addition, studies for the vertex detector of the Belle II experiment are also being done. The process is open to the academic sector, and we are operating one or two Multi Project Wafer (MPW) runs every year. Details of the process and performance of the detectors will be presented.